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MOSFET MODULE
FEATURES
* Dual MOS FETs Cascaded Circuit
Dual 50A /500V
OUTLINE DRAWING
PDM505HA
Dimension(mm) 108.0
* Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel * 300KHz High Speed Switching Possible
Circuit
TYPICAL APPLICATIONS
* Power Supply for the Communications and the Induction Heating
MAXMUM RATINGS Ratings
Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C.
Approximate Weight : 220g
Symbol
VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR
PDM505HA
500 +/ - 20 50 (Tc=25C) 35 (Tc=25C) 100 Tc=25C) 350 Tc=25C) -40 to +150 -40 to +125 2000 3.0 2.0
Unit
V V A A W C C V N*m
Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition
Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125C, VDS=VDSS,VGS=0V VDS=VGS, ID=3mA VGS=+/- 20V,VDS=0V VGS=10V, ID=25A VGS=10V, ID=25A VDS=15V, ID=25A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=25A VGS= -5V, +10V RG= 5 ohm
Min.
2.0 -
Typ.
3.1 110 3.2 30 8.4 1.1 0.24 92 110 250 68
Max.
1.0 4.0 4.0 0.3 120 3.4 -
Unit mA V A m-ohm V S nF nF nF ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=50A IS=50A, -dis/dt=100A/s
Min.
-
Typ.
80 0.18
Max.
35 100 1.5 -
Unit A A V ns C Unit C/W
THERMAL CHARACTERISTICS Characteristic Symbol
Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f)
Test Condition
MOS FET Diode Mounting surface flat, smooth, and greased
Min.
-
Typ.
-
Max.
0.36 2.0 0.1
PDM505HA
108.0
80 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16
16
DRAIN CURRENT ID (A)
60
6
12
40
4
8
20
2
4
0
0
2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V)
12
0
0 -40
0 40 80 120 JUNCTION TEMPERATURE Tj ( )
160
12
16
5
10 CAPACITANCE C (nF)
GATE TO SOURCE VOLTAGE VGS (V)
2 SWITCHING TIME t ( s) 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 600 12
8
1
6
8
0.5
4
0.2
4
2
0.1 0 0.05
0
1
2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V)
100
2
5 10 20 50 100 SERIES GATE IMPEDANCE RG ( )
200
1000
120
500
REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V)
2 1 0.5 0.2 0.1 0.05 0.02 0.01 -5 10
500 SOURCE CURRENT IS (A) SWITCHING TIME t (ns)
100
200
200
80
100
100
60
50
50
40
20
20 10
20
10
1
2
5 10 20 DRAIN CURRENT ID (A)
50
100
0
1.8
5
0
100
200
300 400 -dis/dt (A/ s)
500
600
200 100 50 DRAIN CURRENT ID (A) 20 10 5
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
10 -4
10 -3 10 -2 10 -1 PULSE DURATION t (s)
1
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
2 1 0.5 0.2 0.1 0.05 0.02 0.01 -5 10
2 1 0.5 0.2
1
2
5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V)
10 -4
10 -3 10 -2 10 -1 PULSE DURATION t (s)
1
10

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